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Band gap - Wikipedia
Band gap, explained by RP Photonics Encyclopedia; dielectrics, semiconductors, metals, energy, electronic levels, band gap wavelength, absorption, emission, fluorescence
Band gap, explained by RP Photonics Encyclopedia; dielectrics, semiconductors, metals, energy, electronic levels, band gap wavelength, absorption, emission, fluorescence
Laser-induced white-light emission from graphene ceramics–opening a band gap in graphene | Light: Science & Applications
Photoluminescence spectra of the sample excited above the GaAs band gap... | Download Scientific Diagram
ZnPSe3 as ultrabright indirect band-gap system with microsecond excitonic lifetimes | PNAS
Femtosecond-laser-excited luminescence of the A-band in natural diamond and its thermal control
Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells | ACS Applied Energy Materials
What Is Band Gap (Energy Gap) ?
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys | npj 2D Materials and Applications
Origins of Contrast | What is CL?
Luminescence tuning of Ce3+, Pr3+ activated (Y,Gd)AGG system by band gap engineering and energy transfer - ScienceDirect
Spectroscopy Basics — Klar Scientific
Band Gap Fluorescence from Individual Single-Walled Carbon Nanotubes | Science
Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides | Science Advances
Band gap - Wikipedia
Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2: Journal of Applied Physics: Vol 112, No 1
Photoluminescence Mapping of GaN-Based Nanocolumns- Oxford Instruments
Band-gap-tailored random laser
Origins of Contrast | What is CL?
Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2: Journal of Applied Physics: Vol 112, No 1
Direct and indirect band gaps - Wikipedia
Fundamental knowledge relating laser diode | Laser | Ushio Inc.
Effect of band gap on the red luminescence capability of Pr-doped InGaN layers grown by molecular beam epitaxy: Journal of Applied Physics: Vol 103, No 7